a low vf sc hottky barrier diode 2.0 features ! ! g uard ring die construction for transient protection ! high current capability a b a ! low power loss, high efficiency ! high surge current capability ! for use in low voltage, high frequency inverters, free wheeling, and polarity protection applications c d mechanic al d ata ! cas e: do -15, molded plastic ! terminals: plated leads solderable per mil-std-202, method 208 ! polarity: cathode band ! weight: 0.40 grams (approx.) ! mounting position: any ! marking: type number ! lead free: for rohs / lead free version maximum r a tings and electrical characteristics @t a =25 c unless otherwise specified single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20%. note: 1. valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case. 2. measured at 1.0 mhz and applied reverse voltage of 4.0v d.c. do-15 dim m in max a 24.5 ? b 5.50 7. 62 c 0. 60 0.80 d 2. 60 3. 60 all d i mensions in mm 1 of 2 sr230l ? sr2200l z ibo seno electronic engineering co., ltd. www.senocn.com sr230l ? sr2200l low vf sc hottk y barrier chip sr230l SR240L sr245l sr250l sr260l sr280l sr2100lsr2150lsr2200l 5 0. 1 30 2.0 a unit characteristic symbol 60 a v 220 pf 75 c/w -55 to +150 c peak repet itive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rw m v r rms revers e voltage v r( rms) a verage rectified output current @t l = 75c (not e 1) i o non-repeti t ive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fs m forward vo ltage @i f = 2. 0a v fm p ea k reverse current @t a = 25c a t rated dc blocking voltage @t a = 100c i rm 0. 2 10 ma ty pi cal junction capacitance (note 2) c j ty pi cal thermal resistance (note 1) r ja operati ng and s torage temperature range t j , t st g v 0.45 0. 5 0.75 0.85 v 21 40 28 45 31.5 50 35 60 42 80 56 100 70 150 105 200 140 180
40 20 30 50 60 1 10 100 i , peak forward surge current (a) fsm number of cycles at 60 hz fig. 3 max non-repetitive peak fwd surge current single half-sine-wave (jedec method) t = 100 c j v , reverse voltage (v) fig. 4 typical junction capacitance r 0 20 40 60 80 100 120 140 i,instantaneousreversecurrent(ma) r percent of ra ted peak reverse voltage (%) fig. 5 typical reverse characteristics t = 100 c j t = 75 c j t = 25 c j 100 10 1.0 0.1 0.01 1k 0 0.5 1.0 25 50 75 100 125 150 i a verage forward current (a) o, t , lead temperature ( c) fig. 1 forward current derating curve l 1.5 2.0 2.5 3.0 2 of 2 sr230l ? sr2200l sr230l ? sr2200l z ibo seno electronic engineering co., ltd. www.senocn.com 5.0 10 in stantaneous forward current, (a) instantaneous forward voltage, (v) 1.0 0.1 0.1 0.2 0.5 0.3 0.6 0.9 0.4 0.7 0.8 1.0 s r 280l - 2100l t a = 25 2200l 2150l sb - sr230l-250l sr 260l fig. 2 10 20 10 -2 10 -1 10 0 10 1 10 2 10 3 10 4 10 5 40 60 80 100 t=2 5c j o t=7 5c j o t = 125 c j o reverse current (ua)
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